Simulation of ion implantation for Si using TCAD
Takuma Adachi, Yuki Hirota, Yosuke Nakaguchi, Kota Takahama, Koji Mukai, Masayuki Yamauchi, Nobuharu Okamitsu, Takeshi Tanaka

Cite as:

To realize further high performance in semiconductor devices, the development of efficient processes and a reduction in the number of trial productions are indispensable. Therefore, the orientation of development plans and ...  read more